1/5 axelite confidential materials, do not copy or distribute without written consent . rev.1.1 aug. 25 , 20 11 AM9569D p- channel enhancement mode power mosfet ? general description the to - 252 pack age is widely preferred for all comm ercial - industrial surface mount applications and suited for low voltage applications such as dc/dc converters. ? features simple drive requirement b v dss - 40v fast switching characteristic r ds(on) 90 m rohs compliant & halogen - free i d - 14a ? a bsolute m aximum r atings characteristics symbol rating unit drain - source voltage v ds - 40 v gate - source voltage v gs 20 v conti nuous drain current, v gs @ 10v i d @ t c =2 5 c - 14 a continuous drain current, v gs @ 10v i d @ t c = 10 0 c - 8 .6 a pulsed drain current 1 i dm - 40 a total power dissipation p d @ t c =2 5 c 26 w linear derating factor 0 .21 w/c storage temperature range t s tg - 55 to 150 c operating junction temperature range t j - 55 to 150 c ? thermal data characteristics symbol rating unit maximum thermal resistance, junction - case rthj - c 4.8 c/w maxim um thermal resistance, junction - ambient (pcb mount ) 3 rthj - a 62.5 c/w maximum thermal resistance, junction - ambient rthj - a 110 c/w v?mw`r?y?b? w w w . g o f o t e c h . c o m
2/5 axelite confidential materials, do not copy or distribute without written consent . rev.1.1 aug. 25 , 20 11 AM9569D ? electrical characteristics ( v cc = 5 v, t a =25c, unless otherwise specified) characteristics symbol conditions min typ max u nits drain - source breakdown voltage bv dss v gs =0v, i d = - 250ua - 40 - - v breakdown voltage temperature coefficient bv dss /tj reference to 2 5 c , i d = - 1ma - - 0.03 - v/c static drain - source on - resistance 2 r ds(on) v gs = - 10v, i d = - 10a - - 90 m v gs = - 4.5v, i d = - 6a 130 m gate threshold voltage v gs(th) v ds = v gs , i d = - 250ua - 1 - - 3 v forward trans conductance g fs v ds = - 10v, i d = - 10a - 7 - s drain - source leakage current i dss v ds = - 40v, v gs =0v - - - 1 ua drain - source leakage current (tj=125c) v ds = - 32v, v gs =0v - 250 ua gate - source leakage i gss v gs = + 20v, v ds =0v 100 na total gate charge 2 q g i d = - 10a v ds = - 30v v gs = - 4.5v - 7 12 nc gate - source charge q gs - 2 - nc gate - drain ("miller") charge q gd - 4 - nc turn - on delay time 2 t d(on) v ds = - 20v i d = - 10a r g =3. 3 v gs = - 10v r d = 2 - 8 - sn rise time t r - 20 - ns turn - off delay time t d(off) - 19 - ns fall time t f - 6 - ns input capacitance c iss v gs =0v v ds = - 25v f=1.0mhz - 490 780 pf output capacitance c oss - 80 - pf reverse transfer capacitance c rss - 65 - pf gate resistance r g f=1.0mhz - 5.8 8.7 source - drain diode forward on voltage 2 v ds i s = - 10a, v gs =0v - - - 1.3 v reverse recovery time 2 t rr i s = - 10a, v gs =0v, di/dt= - 100a/s - 28 - ns reverse recovery charge q rr - 26 - nc notes: 1. pulse width limite d by max. junction temperature. 2. pulse test 3. surface mounted on 1 in2 copper pad of fr4 board AM9569D this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. axelite does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ax elite reserv es the right to make changes without further notice to any products herein to improve reliability, function or design. v?mw`r?y?b? w w w . g o f o t e c h . c o m
3/5 axelite confidential materials, do not copy or distribute without written consent . rev.1.1 aug. 25 , 20 11 AM9569D ? typical characteristics fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on - resistance v.s. gate voltag e fig 4 . normalized on - resistance v.s. junction temperature fig 5. forward characteristic of reverse diode fig 6. gate threshold voltage v.s. junction temperature v?mw`r?y?b? w w w . g o f o t e c h . c o m
4/5 axelite confidential materials, do not copy or distribute without written consent . rev.1.1 aug. 25 , 20 11 AM9569D ? typical characteristics (c ountinous ) fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on - resistance v.s. gate voltag e fig 4 . normalized on - resistance v.s. junction temperature fig 5. forward characteristic of reverse diode fig 6. gate threshold vo ltage v.s. junction temperature v?mw`r?y?b? w w w . g o f o t e c h . c o m
5/5 axelite confidential materials, do not copy or distribute without written consent . rev.1.1 aug. 25 , 20 11 AM9569D ? package outlines symbol dimensions in millim e t ers dimensions in inches min. nom. max. min. nom. max. a 2.18 2.29 2.40 0.086 0.090 0.094 a1 0.89 - 1.14 0.035 - 0.045 b 0.61 typ. 0.024 typ. b2 5.20 5.35 5.50 0.205 0.211 0.217 c 0.45 0.52 0.58 0.018 0.02 0 0.023 c1 0.45 0.52 0.58 0.018 0.020 0.023 d 5.40 5.57 6.20 0.213 0.219 0.244 d1 4.57 4.77 4.97 0.180 0.188 0.196 e 6.35 6.58 6.80 0.250 0.259 0.268 e 2.28 bsc. 0.090 bsc. e1 4.57 bsc. 0.180 bsc. h 9.00 9.70 10.40 0.354 0.382 0.409 l 0.51 - - 0.020 - - l1 0.64 0.83 1.02 0.025 0.033 0.040 l2 0.88 - 1.27 0.035 - 0.050 part marking information and packing : to - 252 laser marking v?mw`r?y?b? w w w . g o f o t e c h . c o m
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